Phase Transformation in Radially Merged Wurtzite GaAs Nanowires

Phase Transformation in Radially Merged Wurtzite GaAs Nanowires

III-V Nanowires (NWs) grown with metal-organic chemical vapor deposition commonly show a polytypic crystal structure, allowing growth of structures not found in the bulk counterpart. In this paper we studied the radial overgrowth of pure wurtzite (WZ) GaAs nanowires and characterized the samples with high resolution X-ray diffraction (XRD) to reveal the crystal structure of the grown material. ...

Long exciton lifetimes in stacking-fault-free wurtzite GaAs nanowires

Direct detection of spontaneous polarization in wurtzite GaAs nanowires

HRTEM assessment of Wurtzite and Zinc-Blende phases in GaAs nanowires for optoelectronic devices

1 Semiconductor nanowires have recently attracted a lot of interest as potential building blocks for future electronic and optoelectronic nanodevices. In this work structural and optical properties of semiconductor nanowires are studied by means of high resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) analysis respectively. Several samples of GaAs nanowires grown u...

Vibrational, electronic and structural properties of wurtzite GaAs nanowires under hydrostatic pressure

The structural, vibrational, and electronic properties of GaAs nanowires have been studied in the metastable wurtzite phase via Resonant Raman spectroscopy and synchrotron X-ray diffraction measurements in diamond anvil cells under hydrostatic conditions between 0 and 23 GPa. The direct band gap E0 and the crystal field split-off gap E0 + Δ of wurtzite GaAs increase with pressure and their valu...